D3 Tenders | EBeam Lithographer

Notice Information

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Notice Title

EBeam Lithographer

Notice Description

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with A (sub-1 nm) reading resolution, enabling a stitching accuracy of +-8 nm and overlay accuracy of +-8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (>=2000mm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.

Lot Information

Lot 1

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with A (sub-1 nm) reading resolution, enabling a stitching accuracy of +-8 nm and overlay accuracy of +-8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (>=2000mm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.

Options: For transparency, extensions to service arrangements, and spare parts, may be purchased from the awarded supplier.

Procurement Information

The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with A (sub-1 nm) reading resolution, enabling a stitching accuracy of +-8 nm and overlay accuracy of +-8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (>=2000mm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.

Notice Details

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Publication & Lifecycle

Open Contracting ID: ocds-r6ebe6-0000825231
Publication Source: Public Contracts Scotland
Latest Notice: https://www.publiccontractsscotland.gov.uk/search/show/search_view.aspx?ID=MAR550684
Current Stage: Award
All Stages: Award

Procurement Classification

Notice Type: OJEU - F3 - Contract Award Notice
Procurement Type: Standard
Procurement Category: Goods
Procurement Method: Limited
Procurement Method Details: Award procedure without prior publication of a call for competition
Tender Suitability: Not specified
Awardee Scale: Large

Common Procurement Vocabulary (CPV)

CPV Divisions: 38 - Laboratory, optical and precision equipments (excl. glasses)
CPV Codes: 38000000 - Laboratory, optical and precision equipments (excl. glasses)

Notice Value(s)

Tender Value: Not specified
Lots Value: Not specified
Awards Value: Not specified
Contracts Value: £2,398,869 £1M-£10M

Notice Dates

Publication Date: 2 Mar 20261 weeks ago
Submission Deadline: Not specified
Future Notice Date: Not specified
Award Date: 19 Feb 20263 weeks ago
Contract Period: Not specified - Not specified
Recurrence: Not specified

Notice Status

Tender Status: Complete
Lots Status: Complete
Awards Status: Not Specified
Contracts Status: Active

Buyer & Supplier

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Contracting Authority (Buyer)

Main Buyer: UNIVERSITY OF EDINBURGH
Contact Name: Available with D3 Tenders Premium →
Contact Email: Available with D3 Tenders Premium →
Contact Phone: Available with D3 Tenders Premium →

Buyer Location

Locality: EDINBURGH
Postcode: EH1 1HT
Post Town: Edinburgh
Country: Scotland
Major Region (ITL 1): TLM Scotland
Basic Region (ITL 2): TLM1 East Central Scotland
Small Region (ITL 3): TLM13 City of Edinburgh
Delivery Location: TLM75 City of Edinburgh
Local Authority: City of Edinburgh
Electoral Ward: City Centre
Westminster Constituency: Edinburgh East and Musselburgh

Supplier Information

Number of Suppliers: 1
Supplier Name: JEOL (UK

Further Information

Notice Documents

https://www.publiccontractsscotland.gov.uk/search/show/search_view.aspx?ID=MAR550684
EBeam Lithographer - The University has a requirement for an Electron Beam lithography system which has an acceleration voltage of at least 200 kV. It must be capable of the following: a) Ultra-fine line lithography: 3 nm linewidth, using commercially available resists. This can be obtained by its single-nm digit beam diameter. b) Ultra-high position accuracy: This can be obtained by a laser interferometer with A (sub-1 nm) reading resolution, enabling a stitching accuracy of +-8 nm and overlay accuracy of +-8 nm. c) Uniform fine pattern writing over entire field: Uniform nm-scale lines can be drawn from edge to edge across a large field (>=2000mm) without the need for stitching. This guarantees better accuracy, eliminates the need for stage movement, and enhances writing speed and throughput. d) High throughput lithography: This will be enabled by a 125 MHz (or higher) high-speed deflection system coupled with a new electron beam column design. e) Wafer scale (& multi wafer) processing: Single cassette auto-loader supporting 8-inch wafers with a multi-cassette automatic sample loading system. Fast loading and pumping time. f) Flexibility in sample holders: Offer the ability to simultaneously handle a variety of wafer sizes by incorporating distinct holders for processing full wafers (2-8 inches) and/or small. g) Software: SEM Imaging Software, Alignment Software and CAD designing Software, which allows using and/or converting into industry standard GDSII and DXF file formats. It is believed the JEOL JBX-8100FS G3 Electron Beam Lithography System is the sole machine which complies with these requirements. Therefore, we deem competition is absent for technical reasons.

Notice URLs

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